IRF6665
200
180
I D = 5.0A
120
160
140
100
T J = 125°C
120
100
80
T J = 125°C
80
60
40
20
T J = 25°C
60
T J = 25°C
Vgs = 10V
0
4
6
8
10
12
14
16
18
40
0
2
4
6
8
10
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
ID, Drain Current (A)
Fig 13. On-Resistance vs. Drain Current
15V
50
ID
TOP 0.86A
VDS
L
DRIVER
40
1.3A
BOTTOM 5.0A
RG
GS
20V
tp
D.U.T
IAS
0.01 ?
+
-
VDD
A
30
20
Fig 15a. Unclamped Inductive Test Circuit
10
V (BR)DSS
tp
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
I AS
Fig 15b. Unclamped Inductive Waveforms
V DS
R D
- V DD
R G
V GS
10V
D.U.T.
+
V DS
90%
10%
V GS
Pulse Width ≤ 1 μs
Duty Factor ≤ 0.1 %
t d(on)
t r
t d(off)
t f
Fig 16a. Switching Time Test Circuit
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Fig 16b. Switching Time Waveforms
5
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